HTT1213S silicon npn epitaxial twin transistor ade-208-1448(z) preliminary rev. 0 aug. 2001 features ? include 2 transistors in a small size smd package: smfpak?6 (6 leads: 1.5 x 1.1 x 0.55 mm) q1: equivalent buffer transistor q2: equivalent osc transistor 2sc5700 2sc5700 outline 1. collector q1 2. emitter q1 3. collector q2 4. base q2 5. emitter q2 6. base q1 65 4 3 2 1 b1 e2 b2 c1 e1 c2 pin arrangement q1 q2 smfpak-6 index band 1 2 3 4 5 6 note: marking is ?ck1?.
HTT1213S rev.0, aug. 2001, page 2 of 7 absolute maximum ratings (ta = 25 c) ratings item symbol q1 and q2 unit collector to base voltage v cbo 15 v collector to emitter voltage v ceo 4v emitter to base voltage v ebo 1.5 v collector current i c 50 ma collector power dissipation p c total 220* mw junction temperature tj 150 c storage temperature tstg ?55 to + 150 c *value on pcb. (fr?4 (13 x 13 x 0.635 mm) ) electrical characteristics (q1 and q2) (ta = 25 c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 15 ?? vi c = 10 a, i e = 0 collector cutoff current i cbo ?? 0.1 ma v cb = 15 v, i e = 0 collector cutoff current i ceo ?? 1mav ce = 4 v, r be = infinite emitter cutoff current i ebo ?? 0.2 ma v eb = 0.8 v, i c = 0 dc current transfer ratio h fe 100 130 170 ? v ce = 1 v, i c = 5 ma reverse transfer capacitance c re ? 0.30 0.45 pf v cb = 1 v, f = 1 mhz emitter ground gain bandwidth product f t 10 13 ? ghz v ce = 1 v, i c = 5 ma, f = 1 ghz forward transfer coefficient |s 21 | 2 13 16 ? db noise figure nf ? 1.0 2.0 db v ce = 1 v, i c = 5 ma, f = 900 mhz, s = l = 50 ?
HTT1213S rev.0, aug. 2001, page 3 of 7 main characteristics (q1 and q2) 100 10 100 200 0 120 collector current i c (ma) dc current transfer ratio h fe dc current transfer ratio vs. collector current 25 50 v ce = 1 v 0 0.4 0.6 1 collector current i c (ma) typical forward transfer characteristics 0 12 34 collector current i c (ma) typical output characteristics collector to emitter voltage v ce (v) base to emitter voltage v be (v) 0.2 0.8 v ce = 1 v 10 20 30 40 50 500 a i b = 50 a 100 a 150 a 200 a 250 a 300 a 350 a 400 a 450 a 10 20 30 40 50 1.2 2.0 collector to base voltage v cb (v) reverse transfer capacitance c re (pf) reverse transfer capacitance vs. collector to base voltage 0.1 0.2 0.3 0.4 0.5 0 0.4 0.8 1.6 i e = 0 f = 1mhz
HTT1213S rev.0, aug. 2001, page 4 of 7 1 10 100 collector current i c (ma) s 21 parameter |s 21 | 2 (db) s 21 parameter vs. collector current 4 8 12 16 20 0 2 5 20 50 1 2 5 10 20 50 100 0 4 8 12 16 20 collector current i c (ma) gain bandwidth product f t (ghz) gain bandwidth product vs. collector current v = 2 v ce f = 1 ghz ce v = 1 v v ce = 2v v ce = 1v f = 900 mhz 10 3 5 0 1 20 100 collector current i c (ma) noise figure nf (db) noise figure vs. collector current 25 50 4 2 1 f = 900mhz v = 1 v ce v = 2 v ce
HTT1213S rev.0, aug. 2001, page 5 of 7 0 50 100 150 200 collector power dissipation pc * (mw) collector power dissipation curve ambient temperature ta ( c) 50 100 150 200 250 *: value on pcb. (fr?4 (13 x 13 x 0.635 mm)) 2 device total
HTT1213S rev.0, aug. 2001, page 6 of 7 package dimensions 1.5 0.05 1.0 0.1 1.1 0.1 (0.2) (0.2) 1.5 0.05 0.55max 0.15 +0.1 ? 0.05 6-0.2 +0.1 ? 0.05 (0.5) (0.5) (0.1) (0.1) hitachi code jedec jeita mass (reference value) smfpak-6 ? conforms 0.0025 g as of july, 2001 unit: mm
HTT1213S rev.0, aug. 2001, page 7 of 7 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2001. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra?e 3 d-85622 feldkirchen postfach 201, d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 5.0
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